ÀÌ¿øÀç±³¼ö
¤ý µ¿ÀÇ´ëÇб³ ³ª³ë°øÇаú ºÎ±³¼ö
¤ý Àü°ø : ÀüÀÚ¼¼¶ó¹Í½º¹Ú¸·/³ª³ë¹Ú¸·
¤ý ÁÖ¼Ò : ºÎ»ê±¤¿ª½Ã ºÎ»êÁø±¸ ¾ö±¤·Î 995¹øÁö
¤ý Tel : 051) 890 - 1720 ,2524
¤ý Fax : 051) 890 - 1714
¤ý E-mail : leewj@deu.ac.kr
 
Education
±¸ ºÐ ±â °£ ÇÐ ±³ ¸í Àü °ø Ãëµæ±¹°¡
B.S. 1986.3 ~ 1990.2 Çѱ¹°úÇбâ¼ú¿ø(KAIST) Materials Sci Eng. KOREA
M.S. 1990.3 ~ 1991.2 Çѱ¹°úÇбâ¼ú¿ø(KAIST) Inorganic KOREA
Ph.D. 1991.3. ~ 1995.8 Çѱ¹°úÇбâ¼ú¿ø(KAIST) Materials Sci Eng. KOREA
 
Experience
ÁÖ¿ä°æ·Â
±â °£ ±Ù¹«±â°ü¸í Á÷±Þ ¹× Á÷À§
1995.9. ~ 1997.10. Çѱ¹°úÇбâ¼ú¿ø(KAIST), ÀüÀÚ¼¼¶ó¹ÍÀç·á¿¬±¸¼¾ÅÍ(ECMRC)/ÀüÀÚºÎǰ Àç·á¼³°è Àη±³À°¼¾ÅÍ(EMDEC) Post-Doc.
1996.3. ~ 1997.4. (USA) North Carolina State Universty
Materials Sci Eng.
Post-Doc.
1997.11. ~ 2002.2. Çѱ¹ÀüÀÚÅë½Å ¿¬±¸¿ø(ETRI)
¹ÝµµÃ¼¿øÃµ±â¼ú¿¬±¸¼Ò °­À¯Àüü¼ÒÀÚÆÀ
¼±ÀÓ¿¬±¸¿ø
2002.3. ~ ÇöÀç Dongeui Uni.(Dept. of Nano Technology) ±³¼ö
 
¹Ú»çÇÐÀ§ ³í¹®
RF Magnetron Sputtering¹ýÀ¸·Î Á¦Á¶ÇÑ BSTO ¹Ú¸·ÀÇ ¹°¼º ¹× Ư¼ºÆò°¡
(Key Words: high-dielectric constant, BST films, sputtering, leakage current, thin films analysis)
 
RESEARCH EXPERIENCE
Mar. 2002. - Present
Professor, Advanced Materials Engineering, Dongeui University, Korea
- High dielectric layers by PEALD(plasma enhanced atomic layer deposition) process.
- Electrical properties and mechanism analysis of ferroelectric thin films.
- Nanotechnology.
- SiC, AlN Single Crystal growth by Vapor phase.
 
Nov. 1997.- Feb. 2002.
Senior Researcher, ETRI-Micro-Electronics Technology Lab.
Electronics and Telecommunications Research Institute (ETRI), Korea
- The integration of 1-Tr Ferroelectric Random Access Memory (FRAM) device.
- High dielectric layers by ALD(atomic layer deposition) process.
- SBT films deposited by Cyclic MOCVD and MOD process for NDRO type FRAM.
- Etchings for ferroelectrics and metal electrodes (Pt, Al etc) by MERIE process.
- Semiconductor processes for device integration.
- IR detector array fabrication with using pyroelectric thin films.
- Electrophoretic display for D-paper Application
 
Mar. 1996. - Apr. 1997
Post-doctor, Dept. of Materials Science and Engineering
North Carolina State University, USA
- Fabrications of Liquid Delivery Source MOCVD systems
- Process development of Liquid Delivery Source MOCVD-BST films for G-bit DRAM
capacitors.
- Electrical properties of BST films with various top electrodes (Pt, Ir, Ru).
- Studied " Ferroelectrics in MSE, Semiconductor process in EE"
 
Sep. 1995. - Oct. 1997.
Post-doctor, Electronic Ceramic Materials Research Center, KAIST, Korea
Senior Researcher, Electronic Ceramic Materials Research Center (ECMRC) &
Electronic Component, Materials Design Education Center(EMDEC), KAIST, Korea
- Process development of capacitor materials for high-density DRAM.
- SBT films deposited by ECR-MOCVD process for Non-volatile FRAM.
- High-density DRAM capacitor(ETRI)
- Development of storage capacitor for high-dielectric materials(Hyundai Electronics)
- Process development of thin films actuators(Daewoo Electronics)
 
Mar. 1991. - Aug. 1995.
Graduate Research Assistant,
Dept. of Materials Science and Engineering, KAIST, Korea
- High-density DRAM capacitor(ETRI)
- Development of storage capacitor for high-dielectric materials(Hyundai Electronics)
- Process development of thin films actuators(Daewoo Electronics)
- Ion beam sputtering system/XPS analysis in KRISS( Sep. '92 - Feb. '93 )
- ITO thin films deposited by DC magnetron sputtering(Samsung Corning)
- Powder preparation of Bi-based superconductor by emulsion drying methods.
- Studied surface analysis and deposition techniques for thin films.
 
Mar. 1990. - Feb. 1991.
Graduate Student, Dept. of Materials Science and Engineering, KAIST, Korea
- Powder process of Bi2O3-doped YSZ materials for oxide electrolyte application
(Fuel cell).
- Studied powder processes and electronic ceramic materials including oxide sensor.