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ÁÖ¼Ò : ºÎ»ê±¤¿ª½Ã ºÎ»êÁø±¸ ¾ö±¤·Î 995¹øÁö |
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Tel : 051) 890 - 1720 ,2524 |
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Fax : 051) 890 - 1714 |
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¤ý E-mail
: leewj@deu.ac.kr |
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Education |
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| ±¸ ºÐ |
±â °£ |
ÇÐ ±³ ¸í |
Àü °ø |
Ãëµæ±¹°¡ |
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| B.S. |
1986.3
~ 1990.2 |
Çѱ¹°úÇбâ¼ú¿ø(KAIST) |
Materials
Sci Eng. |
KOREA |
| M.S. |
1990.3
~ 1991.2 |
Çѱ¹°úÇбâ¼ú¿ø(KAIST) |
Inorganic |
KOREA |
| Ph.D. |
1991.3.
~ 1995.8 |
Çѱ¹°úÇбâ¼ú¿ø(KAIST)
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Materials
Sci Eng. |
KOREA |
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Experience |
ÁÖ¿ä°æ·Â |
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| ±â °£ |
±Ù¹«±â°ü¸í |
Á÷±Þ ¹×
Á÷À§ |
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| 1995.9.
~ 1997.10. |
Çѱ¹°úÇбâ¼ú¿ø(KAIST),
ÀüÀÚ¼¼¶ó¹ÍÀç·á¿¬±¸¼¾ÅÍ(ECMRC)/ÀüÀÚºÎǰ Àç·á¼³°è Àη±³À°¼¾ÅÍ(EMDEC) |
Post-Doc. |
| 1996.3.
~ 1997.4. |
(USA) North Carolina State Universty
Materials Sci Eng. |
Post-Doc. |
| 1997.11.
~ 2002.2. |
Çѱ¹ÀüÀÚÅë½Å
¿¬±¸¿ø(ETRI)
¹ÝµµÃ¼¿øÃµ±â¼ú¿¬±¸¼Ò °À¯Àüü¼ÒÀÚÆÀ |
¼±ÀÓ¿¬±¸¿ø
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| 2002.3.
~ ÇöÀç |
Dongeui
Uni.(Dept. of Nano Technology) |
±³¼ö |
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¹Ú»çÇÐÀ§ ³í¹® |
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RF Magnetron
Sputtering¹ýÀ¸·Î Á¦Á¶ÇÑ BSTO ¹Ú¸·ÀÇ ¹°¼º
¹× Ư¼ºÆò°¡
(Key Words: high-dielectric constant,
BST films, sputtering, leakage
current, thin films analysis)
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RESEARCH EXPERIENCE |
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| Mar. 2002. - Present |
| Professor,
Advanced Materials Engineering,
Dongeui University, Korea |
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High dielectric layers by PEALD(plasma
enhanced atomic layer deposition)
process. |
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Electrical properties and mechanism
analysis of ferroelectric thin
films. |
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Nanotechnology. |
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SiC, AlN Single Crystal growth
by Vapor phase. |
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| Nov. 1997.- Feb. 2002. |
Senior
Researcher, ETRI-Micro-Electronics
Technology Lab.
Electronics and Telecommunications
Research Institute (ETRI), Korea |
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The integration of 1-Tr Ferroelectric
Random Access Memory (FRAM) device. |
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High dielectric layers by ALD(atomic
layer deposition) process. |
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SBT films deposited by Cyclic
MOCVD and MOD process for NDRO
type FRAM. |
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Etchings for ferroelectrics and
metal electrodes (Pt, Al etc)
by MERIE process. |
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Semiconductor processes for device
integration. |
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IR detector array fabrication
with using pyroelectric thin films. |
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Electrophoretic display for D-paper
Application |
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| Mar. 1996. - Apr. 1997 |
Post-doctor,
Dept. of Materials Science and
Engineering
North Carolina State University,
USA |
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Fabrications of Liquid Delivery
Source MOCVD systems |
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Process development of Liquid
Delivery Source MOCVD-BST films
for G-bit DRAM
capacitors. |
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Electrical properties of BST films
with various top electrodes (Pt,
Ir, Ru). |
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Studied " Ferroelectrics
in MSE, Semiconductor process
in EE" |
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| Sep. 1995. - Oct. 1997. |
Post-doctor,
Electronic Ceramic Materials Research
Center, KAIST, Korea
Senior Researcher, Electronic
Ceramic Materials Research Center
(ECMRC) &
Electronic Component, Materials
Design Education Center(EMDEC),
KAIST, Korea |
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Process development of capacitor
materials for high-density DRAM. |
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SBT films deposited by ECR-MOCVD
process for Non-volatile FRAM. |
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High-density DRAM capacitor(ETRI) |
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Development of storage capacitor
for high-dielectric materials(Hyundai
Electronics) |
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Process development of thin films
actuators(Daewoo Electronics) |
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| Mar. 1991. - Aug. 1995. |
Graduate
Research Assistant,
Dept. of Materials Science and
Engineering, KAIST, Korea |
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High-density DRAM capacitor(ETRI) |
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Development of storage capacitor
for high-dielectric materials(Hyundai
Electronics) |
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Process development of thin films
actuators(Daewoo Electronics)
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Ion beam sputtering system/XPS
analysis in KRISS( Sep. '92 -
Feb. '93 ) |
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ITO thin films deposited by DC
magnetron sputtering(Samsung Corning) |
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Powder preparation of Bi-based
superconductor by emulsion drying
methods. |
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Studied surface analysis and deposition
techniques for thin films. |
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| Mar. 1990. - Feb. 1991. |
| Graduate
Student, Dept. of Materials Science
and Engineering, KAIST, Korea |
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Powder process of Bi2O3-doped
YSZ materials for oxide electrolyte
application
(Fuel cell). |
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Studied powder processes and electronic
ceramic materials including oxide
sensor. |
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